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 Preliminary
RF2369
3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER
4
Typical Applications
* CDMA/Cellular Bypass LNA * CDMA/Cellular Bypass Driver Amplifier
* General Purpose Amplification * Commercial and Consumer Systems
Product Description
The RF2369 is a switchable low noise amplifier with a very high dynamic range designed for digital cellular applications. The device functions as an outstanding front end low noise amplifier. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 6-lead plastic package.
1.80 1.40 0.50 0.35 3.10 2.70 0.10 MAX.
4
GENERAL PURPOSE AMPLIFIERS
TEXT *
1.90
3.00 2.60
1.30 1.00
0.90 0.70
9 1 All dimensions in mm.
0.25 0.10 0.37 MIN.
*When Pin 1 is in upper left, text reads downward (as shown).
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOT 6-Lead
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Low Noise and High Intercept Point * Adjustable Bias Current * LNA Bypass Loss is +2dB
VREF/PD
1
Logic Control
6
SELECT
* 150MHz to 2500MHz Operation * Meets IMD Tests with Two Gain States/ Single Logic Control Line
GND1
2
5
GND2
RF IN
3
4
RF OUT
Ordering Information
RF2369 RF2369 PCBA 3V Low Noise Amplifier/ 3V PA Driver Amplifier Fully Assembled Evaluation Board (LNA)
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A3 010720
4-183
RF2369
Absolute Maximum Ratings Parameter
Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature
Preliminary
Rating
-0.5 to +8.0 +10 -40 to +85 -40 to +150
Unit
VDC dBm C C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Specification Min. Typ. Max.
150 824 to 894 2500
Unit
MHz
Condition
TAMB =25C, VCC =3.0V
4
GENERAL PURPOSE AMPLIFIERS
Overall
Frequency Range
Cellular Low Noise Amplifier
Frequency HIGH GAIN MODE Gain Noise Figure Input IP3 Input VSWR Output VSWR Current Drain BYPASS MODE Gain Input IP3 Input VSWR Output VSWR Current Drain 869 14.0 9.0 15.5 1.6 11.5 894 17.0 2.0 2:1 2:1 10.0 -1 2:1 2:1 4.0 849 15.5 2.0 -65 -70 2:1 2:1 8.5 -3.0 +10 -2.0 +24 -1.0 2:1 2:1 4.0 mA Gain Select>1.8V, VPD/VREF =0V dB dBm 17.0 2.5 MHz Gain Select<0.8V, VPD/VREF =3V dB dB dBm
7.5 -3 +10 -2 +24
mA Gain Select>1.8V, VPD/VREF =0V dB dBm
2.0 824 14.0 4
mA MHz Gain Select<0.8V, VPD/VREF =3V dB dB dBm dBc/30kHz dBc/30kHz
Cellular CDMA Driver
Frequency HIGH GAIN MODE Gain Noise Figure Output Power ACPR1 ACPR2 Input VSWR Output VSWR Current Drain BYPASS MODE Gain Input IP3 Input VSWR Output VSWR Current Drain
POUT =+4dBm, +885kHz offset POUT =+4dBm, +1.98MHz offset
2.0 3
mA V V V
Power Supply
Voltage (VCC) VSELECT Low VSELECT High Power Down 1.8 0 10 0.8 High Gain mode. Select<0.8V, VPD/VREF =3V Low Gain mode. Select>1.8V, VPD/VREF =0V Gain Select<0.8V, VPD/VREF =0V, VCC =0V
A
4-184
Rev A3 010720
Preliminary
Bypass Possibility
Gain Select
>1.8V >1.8V
RF2369
VPD/VREF
0V 3V
VCC
3V 3V
Current
2.3mA 3.4mA
Comments
Recommended Bypass Mode Alternative Bypass Mode
4
GENERAL PURPOSE AMPLIFIERS
Rev A3 010720
4-185
RF2369
Pin 1 Function VREF/PD Description
For low noise amplifier applications, this pin is used to control the bias current. An external resistor can be used to set the bias current for any VPD voltage.
Preliminary
Interface Schematic
VREF/PD
2 3
GND1 RF IN
Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input pin.
4
GENERAL PURPOSE AMPLIFIERS
To Bias Circuit RF OUT RF IN
4
RF OUT
5
GND2
Amplifier output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. LNA emittance inductance. Total inductance is comprised of package+bondwire+stripline (L1) on PCB.
6
SELECT
This pin selects high gain and bypass. Select < 0.8V, high gain. Select > 1.8V, low gain.
4-186
Rev A3 010720
Preliminary
Application Schematic Cellular Low Noise Amplifier ~881MHz
C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 L2 10 nH 5 C3 3 pF
Logic Control
RF2369
R1 1.6 k VREF/PD
6 L1 1.5 nH
SELECT
J1 RF IN
50 strip
J2 RF OUT
4
GENERAL PURPOSE AMPLIFIERS
VCC C5 10 nF C4 100 pF
Application Schematic Cellular Driver Amplifier ~836MHz
C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 L2 10 nH VCC C5 10 nF C4 100 pF 5 C3 3 pF 50 strip
Logic Control
R1 1.3 k VREF/PD
6 L1 1.5 nH
SELECT
J1 RF IN
J2 RF OUT
Rev A3 010720
4-187
RF2369
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 P1-3 3 CON3 VCC GND NC P2-3 P2-1 P2 1 2 3 CON3 C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 R2* DNI
2366401-
Preliminary
Evaluation Board Schematic - Cellular LNA
VREF GND SELECT
4
GENERAL PURPOSE AMPLIFIERS
R1 1.6 k VREF
Logic Control
6 L1 1.5 nH 5 C3 3 pF L2 10 nH 50 strip
SELECT
J1 RF IN
J2 RF OUT
VCC C5 10 nF C4 100 pF
NOTE: Components with * following reference designator should not be populated on the evaluation board.
4-188
Rev A3 010720
Preliminary
Evaluation Board Layout Board Size 1.0" x 1.0"
Board Thickness 0.032", Board Material FR-4
RF2369
4
GENERAL PURPOSE AMPLIFIERS
Rev A3 010720
4-189
RF2369
High Gain Mode Noise Figure versus VCC,
2.5
Preliminary
Gain (Bypass Mode) versus VCC
-2.2
Cellular LNA
Cellular LNA
-2.3 2.0 -2.4
Noise Figure (dB)
1.5
Bypass Gain (dB)
-2.5
1.0
-2.6
4
GENERAL PURPOSE AMPLIFIERS
-2.7 0.5 NF, -30C NF, +25C NF, +85C 0.0 2.5 2.7 2.9 3.1 3.3 3.5 -2.8 TEMP = -30C TEMP = 25C TEMP = 85C
-2.9 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
VCC (V)
VCC (V)
IIP3 (High Gain Mode) versus VCC
14.0
Gain (High Gain Mode) versus VCC
17.0
Cellular LNA
Cellular LNA
13.0 16.5 12.0
High Gain Gain (dB)
TEMP = -30C TEMP = 25C TEMP = 85C
High Gain IIP3 (dB)
11.0
16.0
10.0
15.5
9.0 15.0 TEMP=-30C TEMP=25C TEMP=85C 14.5 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
8.0
7.0
VCC (V)
VCC (V)
IIP3 (Bypass Mode) versus VCC
29.0 28.0 10.0 27.0 26.0 9.0
Total ICC (High Gain Mode) versus VCC
11.0
Cellular LNA
Cellular LNA
Bypass IIP3 (dB)
25.0 24.0 23.0 22.0 21.0 20.0 19.0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 TEMP = -30C TEMP = 25C TEMP = 85C
Total ICC (mA)
8.0
7.0
6.0
5.0
TEMP = -30C TEMP = 25C TEMP = 85C
4.0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
VCC (V)
VCC (V)
4-190
Rev A3 010720
.4 -0
-3 .0
-4. 0 -5.0
Swp Max 6GHz
.4 -0
0.2
-0. 6
0. 4
-0.2
0.2
-3 .0
-4. 0 -5.0
-10.0
Swp Min 0.05GHz
-10.0
Rev A3 010720
0.2
0.6
-0. 6
0.4 0.6 0.8
0. 4
Preliminary
-0.2
-0.8
0.2
0
0.8
Bypass
-1.0 1.0
1.0
2.0 3.0 4.0 5.0
0 3.
2. 0
.0 -2
10.0
10.0
4.0 5.0
0
0.4
-0.8
0.6
0.6 0.8 -1.0 1.0
0.8
High Gain
1.0
2.0 3.0
.0 -2
2. 0
4.0 5.0
0 3.
10.0
10.0
Swp Max 6GHz
4.0 5.0
RF2369
Swp Min 0.05GHz
4-191
4
GENERAL PURPOSE AMPLIFIERS
RF2369
Bypass Mode S11 S11 Bypass Mode
1.0 1.0
Preliminary
High High Gain Mode S11 Gain Mode S11
0.6
0.6
Swp Max 6GHz
2.0
Swp Max 6GHz
2.0
0.8
3.0
0.8
4.0
5.0
10.0
10.0
GENERAL PURPOSE AMPLIFIERS
.4 -0
.4 -0
.0 -2
- 0. 6
- 0. 6
.0 -2
Swp Min 0.05GHz
Swp Min 0.05GHz
-0.8
-1.0
-0.8
Bypass Mode S22 S22 Bypass Mode
1.0
High High Gain Mode S22 Gain Mode S22
2.0
0.6
0.6
Swp Max 6GHz
1.0
-1.0
Swp Max 6GHz
2.0
0.8
3.0
0.8
3.0
4.0
4.0
5.0
10.0
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
.4 -0
.4 -0
.0 -2
- 0. 6
Swp Min 0.05GHz
- 0. 6
.0 -2
Swp Min 0.05GHz
-0.8
-1.0
-0.8
4-192
-1.0
Rev A3 010720
-5.0
-4. 0
-3 .0
-5.0
-0.2
-0.2
-10.0
-5.0
-4. 0
-3 .0
0. 4
0.2
-10.0
-5.0
-0.2
-0.2
5.0
-10.0
-10.0
4
-4. 0
-3 .0
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0. 4
0.2
-4. 0
-3 .0
0. 4 0. 4
3.0
4.0
5.0
0.2 0.2
10.0


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